Noah Zamdmer - Semiconductor Research and Development Center, IBM Microelectronics

基本信息

Career Trajectory

Bio

Noah D. Zamdmer IBM Systems, Hopewell Junction, NY 12533 USA (noahz@us.ibm.com). Dr. Zamdmer is the Manager of the Product Performance Department of IBM Systems Division, which validates the electronic devices and circuits received by IBM from its semiconductor suppliers. He received a Ph.D. degree in electrical engineering from the Massachusetts Institute of Technology in 1999, and has worked with IBM in semiconductor technology development since then. His interests include model-to-hardware comparison, design kit benchmarking, and variability analysis.

Research Interests

Papers共 67 篇Author StatisticsCo-AuthorSimilar Experts

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Design and Analysis of Discrete FET Monitors in 7nm FinFET Product for Robust Technology Validation

V. Vidya,N. Zamdmer, T. Mechler,K. Onishi,D. Chidambarrao,B. W. Jeong, Y. G. Ko, C. H. Lee,J. Sim,M. Angyal,E. Crabbe

2023 35th International Conference on Microelectronic Test Structure (ICMTS)pp.1-3, (2023)

Cited1Views0EIWOSBibtex

Experiment and Model for Distance-Dependent Mismatch

N Lu, R Wachnik,N Zamdmer

TechConnect Briefsno. 2018 (2018): 228-231

Cited0Views0Bibtex

Ti and NiPt/Ti Liner Silicide Contacts for Advanced Technologies

P. Adusumilli,E. Alptekin,M. Raymond,N. Breil,F. Chafik,C. Lavoie, D. Ferrer,S. Jain,V. Kamineni,A. Ozcan, S. Allen, J. J. An,V. Basker,R. Bolam,H. Bu, J. Cai,J. Demarest,B. Doris,E. Engbrecht,S. Fan,J. Fronheiser,O. Gluschenkov,D. Guo,B. Haran, D. Hilscher,H. Jagannathan,D. Kang,Y. Ke,J. Kim,S. Koswatta, A. Kumar,A. Labonte, R. Lallement, W. Lee, Y. Lee,J. Li,C-H Lin,B. Liu,Z. Liu,N. Loubet, N. Makela,S. Mochizuki,B. Morgenfeld,S. Narasimha, T. Nesheiwat,H. Niimi,C. Niu,M. Oh,C. Park,R. Ramachandran,J. Rice,V. Sardesai,J. Shearer,C. Sheraw,C. Tran,G. Tsutsui,H. Utomo,K. Wong,R. Xie,T. Yamashita,Y. Yan,C. Yeh, M. Yu,N. Zamdmer, N. Zhan, B. Zhang,V. Paruchuri, C. Goldberg,W. Kleemeier, S. Stiffler,R. Divakaruni,W. Henson

2016 IEEE Symposium on VLSI Technology（2016）

Cited24Views0EIWOSBibtex

A Study of Beol Resistance Mismatch in Double Patterning Process

Shaoning Yao,Larry Clevenger,Noah Zamdmer

2015 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE AND 2015 IEEE MATERIALS FOR ADVANCED META...（2015）

Cited1Views0EIWOSBibtex

Off-State Self-Heating, Micro-Hot-Spots, And Stress-Induced Device Considerations In Scaled Technologies

Siyuranga O. Koswatta, N. Mavilla,M. Bajaj,J. Johnson,S. Gundapaneni, C. Scott,G. Freeman, D. Poindexter,Paul S. McLaughlin,S. Mittl, L. Sigal,James D. Warnock,Noah Zamdmer,Sungjae Lee,Richard A. Wachnik,C-H. Lin,Edward J. Nowak

2015 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)（2015）

Cited15Views0EIWOSBibtex

SOI FinFET Nfet-to-pfet Tracking Variability Compact Modeling and Impact on Latch Timing

Jie Deng,Ardasheir Rahman,Rainer Thoma,Peter W. Schneider, Jim Johnson, Henry Trombley,Ning Lu,Richard Q. Williams,Hasan M. Nayfeh, Kai Zhao,Russ Robison,Ximeng Guan,Noah Zamdmer,Steve Shuma,Brian Worth, James E. Sundquist,Eric A. Foreman,Scott K. Springer,Rick Wachnik

IEEE Transactions on Electron Devices（2015）

Cited8Views0EIWOSBibtex

High Performance 14nm SOI FinFET CMOS Technology with 0.0174µm2 Embedded DRAM and 15 Levels of Cu Metallization

C-H. Lin,B. Greene,S. Narasimha,J. Cai,A. Bryant,C. Radens,V. Narayanan,B. Linder, H. Ho, A. Aiyar,E. Alptekin, J-J. An,M. Aquilino,R. Bao,V. Basker,N. Breil,M. Brodsky, W. Chang,L. Clevenger,D. Chidambarrao, C. Christiansen, D. Conklin,C. DeWan, H. Dong,L. Economikos, B. Engel, S. Fang, D. Ferrer, A. Friedman,A. Gabor,F. Guarin, X. Guan, M. Hasanuzzaman, J. Hong, D. Hoyos,B. Jagannathan, S. Jain, S-J. Jeng, J. Johnson, B. Kannan, Y. Ke,B. Khan, B. Kim,S. Koswatta,A. Kumar, T. Kwon,U. Kwon,L. Lanzerotti, H-K Lee, W-H. Lee, A. Levesque, W. Li, Z. Li, W. Liu, S. Mahajan,K. McStay,H. Nayfeh, W. Nicoll,G. Northrop, A. Ogino,C. Pei, S. Polvino, R. Ramachandran,Z. Ren,R. Robison,I. Saraf,V. Sardesai, S. Saudari,D. Schepis,C. Sheraw,S. Siddiqui,L. Song, K. Stein, C. Tran,H. Utomo,R. Vega, G. Wang, H. Wang, W. Wang, X. Wang, D. Wehelle-Gamage,E. Woodard, Y. Xu, Y. Yang, N. Zhan, K. Zhao, C. Zhu, K. Boyd,E. Engbrecht,K. Henson,E. Kaste,S. Krishnan, E. Macieje Ski,H. Shang,N. Zamdmer,R. Divakaruni, J. Rice,S. Stiffler,P. Agnello

2014 IEEE International Electron Devices Meeting（2014）

Cited169Views0EIWOSBibtex

169

Performance-Based Metrology of Critical Device Performance Parameters for In-Line Non-Contact High-Density Intra-Die Monitor/Control on A 32nm Soi Advanced Logic Product Platform

Mario M. Pelella,Anda C. Mocuta, Birk Lee,Noah Zamdmer,Dustin K. Slisher,Xiaojun Yu,James S. Vickers, Yota Tsuruta,Subramanian S. Iyer,Nader Pakdaman

METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XXVII（2013）

Cited0Views0Bibtex

Chip-level Power-Performance Optimization Through Thermally-Driven Across-Chip Variation (ACV) Reduction

X. Yu,O. Gluschenkov,N. D. Zamdmer, J. Deng,B. A. Goplen,H. S. Landis,L. R. Logan,J. A. Culp,Y. Liang,M. Cai, W. Lee,N. Rovedo,F. D. Tamweber, D. M. Lea,B. J. Greene,J. Sim,D. K. Slisher,A. I. Chou, P. Chang, H. Trombley,E. J. Nowak,S. V. Deshpande,W. K. Henson,A. C. Mocuta,K. Rim

International Electron Devices Meeting（2011）

Cited4Views0EIWOSBibtex

ETSOI CMOS for System-on-Chip Applications Featuring 22nm Gate Length, Sub-100nm Gate Pitch, and 0.08mm2 RAM Cell

mag（2011）

Cited34Views0Bibtex

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