Yang Ling - Xidian University, Xidian Univ.

基本信息

Career Trajectory

Bio

September 2004, I joined the State Key Laboratory of Wide Band gap Semiconductor. During my graduate and doctoral study, I have done much research work, mainly including the fabrication, process, reliability and simulation of III-nitride HEMT and optoelectronic devices.

Research Interests

Papers共 181 篇Author StatisticsCo-AuthorSimilar Experts

By YearBy Citation主题筛选期刊级别筛选合作者筛选合作机构筛选

The Effect of Channel Layer Thickness on the Performance of GaN HEMTs for RF Applications

Qian Yu,Sheng Wu,Meng Zhang,Ling Yang, Xu Zou,Hao Lu,Chunzhou Shi, Wenze Gao,Mei Wu,Bin Hou,Gang Qiu,Xiaoning He,Xiaohua Ma,Yue Hao

MICROMACHINESno. 1 (2025)

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Channel to Channel Thermal Coupling of Double-Channel GaN-based HEMTs

Shiming Li,Mei Wu,Ling Yang,Hao Lu,Bin Hou,Meng Zhang,Xiaohua Ma,Yue Hao

2024 30TH INTERNATIONAL WORKSHOP ON THERMAL INVESTIGATIONS OF ICS AND SYSTEMS, THERMINIC 2024 (2024)

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High Performance CMOS-Compatible RF GaN-on-Silicon HEMTs with Low-Resistive and Highly-Conformal Ohmic Contacts

Hao Lu,Bin Hou,Ling Yang,Longge Deng,Likun Zhou,Zeyan Si,Meng Zhang,Mei Wu,Qing Zhu,Xiaohua Ma,Yue Hao

IEEE TRANSACTIONS ON ELECTRON DEVICESno. 9 (2024): 5218-5224

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Electron-Irradiation Induced Unconventional Phase Transition of Β-Ga2o3 Epitaxial Single-Crystal Thin Film Observed by In-Situ Tem

Qing Zhu,Jiatong Fan,Yuxiang Wei,Zhan Wang,Jiejie Zhu,Jing Sun,Zhenni Wang,Xichen Wang,Ling Yang,Shaojie Song,Yimin Lei,Xiaohua Ma

Journal of Materials Research and Technology (2024): 2397-2405

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Simulation and Analysis of Enhancement-Mode AlGaN/GaN HEMT with P-I-N Junction Gate

Mao Jia,Bin Hou,Ling Yang,Meng Zhang,Qingyuan Chang,Xuerui Niu,Chunzhou Shi,Jiale Du,Mei Wu,Hao Lu,Xiaohua Ma,Yue Hao

Journal of Physics D Applied Physicsno. 26 (2024): 265101-265101

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Comparison of SiNx Dielectric Layer Grown by Plasma‐Enhanced Chemical Vapor Deposition, Low‐Pressure Chemical Vapor Deposition, and Metal‐Organic Chemical Vapor Deposition in Diamond‐ and GaN‐Based Integrated Devices

Haolun Sun,Mei Wu,Ping Wang,Chao Yuan,Guoliang Ma,Ling Yang,Xiaohua Ma,Yue Hao

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICSno. 11 (2024)

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Improved RF Power Performance Via Electrostatic Shielding Effect Using AlGaN/GaN/graded-AlGaN/GaN Double-Channel Structure

Chunzhou Shi,Ling Yang,Meng Zhang,Hao Lu,Mei Wu,Bin Hou,Xuerui Niu,Qian Yu,Wenliang Liu, Wenze Gao,Xiaohua Ma,Yue Hao

Science China Information Sciencesno. 4 (2024): 1-2

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Energy-Efficient Brain Floating Point Convolutional Neural Network Using Memristors

Shao-Qin Tong,Han Bao,Jian-Cong Li,Ling Yang,Hou-Ji Zhou,Yi Li,Xiang-Shui Miao

IEEE TRANSACTIONS ON ELECTRON DEVICESno. 5 (2024): 3293-3300

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High Power Linearity and Low Leakage Current of AlN/GaN/InGaN Coupling Channel HEMTs with N2O Oxidation Treatment

Hao Lu,Longge Deng,Ling Yang,Bin Hou,Likun Zhou,Meng Zhang, Long Chen,Mei Wu,Qian Yu,Kai Cheng,Xiaohua Ma,Yue Hao

IEEE ELECTRON DEVICE LETTERSno. 6 (2024): 960-963

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Recess-free Enhancement-Mode AlGaN/GaN RF HEMTs on Si Substrate

Tiantian Luan,Sen Huang,Guanjun Jing,Jie Fan,Haibo Yin, Xinguo Gao, Sheng Zhang,Ke Wei,Yankui Li,Qimeng Jiang,Xinhua Wang,Bin Hou,Ling Yang,Xiaohua Ma,Xinyu Liu

JOURNAL OF SEMICONDUCTORSno. 6 (2024)

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