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Research Interests

Papers共 156 篇Author StatisticsCo-AuthorSimilar Experts

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Oxygen Ion Concentration Distribution Effect on Bipolar Switching Properties of Neodymium Oxide Film’s Resistance and Random Access Memory Devices
Kai-Huang Chen, Ming-Cheng Kao, Hsin-Chin Chen, Yao-Chin Wang
Nanomaterials (Basel, Switzerland)no. 6 (2025)
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Fabrication and Characterization of Tungsten-Modified TiO2 As a Photo-Anode in a Dye-Sensitized Solar Cell
Ming-Cheng Kao, Jun-Hong Weng, Chih-Hung Chiang,Kai-Huang Chen, Der-Yuh Lin, Tsung-Kuei Kang
Engineering Proceedingsno. 1 (2025): 76
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Bipolar Switching Properties and Reaction Decay Effect of BST Ferroelectric Thin Films for Applications in Resistance Random Access Memory Devices
Yao-Chin Wang,Kai-Huang Chen, Ming-Cheng Kao, Hsin-Chin Chen,Chien-Min Cheng, Hong-Xiang Huang, Kai-Chi Huang
Nanomaterials (Basel, Switzerland)no. 8 (2025)
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Structural and Electrical Properties of BiFeO3 Nanocrystalline Thin Films Crystallized by Rapid Thermal Annealing Process
Ming-Cheng Kao, Mahesh,Jun-Hong Weng,Chih-Hung Chiang,Kai-Huang Chen,Der-Yuh Lin,Tsung-Kuei Kang
2024 IEEE Ultrasonics, Ferroelectrics, and Frequency Control Joint Symposium (UFFC-JS)pp.1-3, (2024)
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Study on Supercritical Fluid Technique for Application in Nonvolatile Resistive Random Access Memory (RRAM) Device Using SBT Ferroelectric Thin Films
Kai-Huang Chen,Ming-Cheng Kao,Chien-Min Cheng, Yao-Chin Wang, Cheng-Che Hsieh, Guo-Jau Hung
2024 IEEE Ultrasonics, Ferroelectrics, and Frequency Control Joint Symposium (UFFC-JS)pp.1-3, (2024)
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2Nm Platform Technology Featuring Energy-Efficient Nanosheet Transistors and Interconnects Co-Optimized with 3DIC for AI, HPC and Mobile SoC Applications
Geoffrey Yeap,S.S. Lin, H.L. Shang, H.C. Lin, Y.C. Peng, M. Wang,PW Wang, CP Lin,KF Yu, WY Lee,HK Chen,DW Lin,BR Yang,CC Yeh, CT Chan, JM Kuo, C-M Liu, TH Chiu, MC Wen,T.L. Lee, CY Chang, R. Chen, P-H Huang,C.S. Hou, YK Lin, FK Yang, J. Wang, S. Fung, Ryan Chen, C.H. Lee,TL Lee, W. Chang, DY Lee, CY Ting, T. Chang, HC Huang,HJ Lin, C. Tseng, CW Chang,KB Huang,YC Lu, C-H Chen,C.O. Chui, KW Chen,MH Tsai, CC Chen, N. Wu,HT Chiang, XM Chen,SH Sun,JT Tzeng, K. Wang, YC Peng, HJ Liao, T. Chen,YK Cheng, J. Chang, K. Hsieh, A. Cheng, G. Liu, A. Chen,HT Lin, KC Chiang, CW Tsai, H. Wang, W. Sheu, J. Yeh, YM Chen, CK Lin, J. Wu, M. Cao, LS Juang, F. Lai, Y. Ku,S.M. Jang, L.C. Lu
2024 IEEE International Electron Devices Meeting (IEDM)pp.1-4, (2024)
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Author Statistics

#Papers: 156

#Citation: 2467

H-Index: 26

G-Index: 46

Sociability: 6

Diversity: 3

Activity: 9

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