Hamada, Hiroshi

Hiroshi Hamada (Member, IEEE) received the B.E. and M.E. degrees in electrical engineering from the Tokyo Institute of Technology, Tokyo, Japan, in 2009 and 2011, respectively. He joined NTT Photonics Laboratories, Nippon Telegraph and Telephone Corporation (NTT), Atsugi, Japan, in 2011. He was engaged in researches of indium phosphide (InP)-transistor-based THz monolithic microwave integrated circuits (MMICs) and modules such as 300-GHz power amplifiers, mixers, transceivers, and 500-GHz amplifiers in NTT Photonics Labs and Device Technology Labs from 2011–2021. He served as an Assistant Manager and a Manager in 6G-IOWN Promotion Department, NTT DOCOMO, Inc., Yokosuka, Japan, from 2021 to 2023. He is currently a Senior Research Engineer at NTT Device Technology Laboratories, Atsugi. Mr. Hamada is a member of the Institute of Electrical and Electronics Engineers (IEEE) and the Institute of Electronics, Information and Communication Engineers (IEICE). He has been serving as a member of the IEEE Microwave Theory and Technology Society (MTT-S) Technical Committee on Microwave and Millimeter-Wave Solid State Devices (TC-9) since 2021 and ITPC member of the IEEE International Solid-State Circuits Conference (ISSCC) RF Subcommittee since 2023. He was a recipient of the IEEE IMS Best Industry Paper Award in 2016, the URSI AP-RASC Young Scientist Award in 2016, the APMC Prize in 2018, the IEICE Young Researcher’s Award in 2019, the IEEJ Excellent Presentation Award in 2022, IEEE MTT-S Japan Young Engineer Award in 2022, and Michiyuki Uenohara Memorial Award in 2022.