H. Arimura

Hiroaki Arimura received the M.S. and Ph.D. degrees in material science and engineering from Osaka University, Suita, Japan, in 2009 and 2011, respectively. In 2011, he joined the Reliability Group, imec, KU Leuven, Leuven, Belgium, as a Post-Doctoral Researcher, where he studied negative bias temperature instability of sub-1-nm EOT Si-MOSFETs. In 2013, he joined the Logic Device Group, imec, where he focuses on Ge channel devices.