He has worked on developing Toggle and then Spin-Transfer-Torque MRAM, including discovering perpendicular magnetic anisotropy in CoFeB|MgO and using these materials to make the first practical perpendicularly magnetized tunnel junctions. Daniel led the IBM team to demonstrate the first integrated perpendicular Spin-Transfer-Torque MRAM, with ultra-low write-error-rate. His current research interests include magnetic devices and their behavior at small dimensions, and new hardware approaches to machine learning. Dr. Worledge has received four IBM Outstanding Technical Achievement Awards, three IBM Outstanding Innovation Awards, the IBM Research Client Award, and is a Fellow of APS and IEEE.