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个人简介
Denis Rideau received the Degree in engineering from ESIEE Paris, Noisy-le-Grand, France, in 1996, and the Ph.D. degree in physics from the University of Paris-Sud, Orsay, France, in 2001.
He is currently involved in TCAD simulations with STMicroelectronics, Crolles, France. His current research interests include modeling and simulation of Si nanodevices, with emphasis on quantum effects, strain effects, wafer orientations, and alternative channel materials in FDSOI and FinFets.
研究兴趣
论文共 160 篇作者统计合作学者相似作者
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Denis Rideau, Mathys Le Grand, Louis Henri Fernandez Mouron,Valerie Serradeil, Loumi Tremas,Pascal Urard, Damien Maitre, Habib Mohamad, Lucie Dilhan, Enrico Giuseppe Carnemolla, Matteo Fissore, James Downing,Bruce Rae
2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)pp.01-04, (2024)
Bruno H. Lopes,Pascal Fonteneau,Denis Rideau,Remi Helleboid,Gabriel Mugny, Boris R. Goncalves,Matteo M. Vignetti,Goutham Nayak,Maryline Bawedin,Anne Kaminski
PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XXXII (2024)
Patryk Maciazek,Isobel Nicholson, Jean–Robert Manouvrier,Denis Rideau, Filip Kaklin, Elsa Lacombe, Mohammed Al–Rawhani, Christel Bu,Sara Pellegrini,Vihar Georgiev
2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)pp.01-04, (2024)
2023 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, SISPADpp.141-144, (2023)
Denis Rideau,remi HELLEBOID,Gabriel Mugny,Raul-andres BIANCHI, Jean-Robert MANOUVRIER,Isobel NICHOLSON,Jeremy Grebot, Elsa LACOMBE, Alexandre Lopez,D. Golanski,B. Mamdy,Bruce RAE,Sara PELLEGRINI,Megan AGNEW,Wilfried Uhring, SWEN RINK, H. Wehbe Alause
Advanced Photon Counting Techniques XVII (2023)
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (2023)
Jeremy Grebot,Remi Helleboid,Gabriel Mugny,Isobel Nicholson, Louis-Henri Fernandez Mouron,Stephane Lanteri,Denis Rideau
2023 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, SISPADpp.365-368, (2023)
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (2023)
S. Pellegrini,I. Nicholson,R. Helleboid,B. Mamdy, G. Forcolin, M. Al-Rawhani,C. Buj, G. Marchand,B. Rae,D. Golanski,G. Mugny,R. A. Bianchi,D. Rideau
2023 International Electron Devices Meeting (IEDM)pp.1-4, (2023)
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作者统计
#Papers: 160
#Citation: 1769
H-Index: 23
G-Index: 36
Sociability: 6
Diversity: 3
Activity: 3
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