Berangere Hyot - CEA LETI, Univ Grenoble Alpes

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论文共 90 篇作者统计合作学者相似作者

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Crack-Free AlN Film Grown on Sputtered-AlN/2D MoS2 Seed Layers on a Si(100)-Based Wafer: Implications for Radio-Frequency Acoustic Filters

Berangere Hyot,Amelie Dussaigne,Julien Patouillard,Remy Gassilloud,Mathieu Bernard,Stephane Cadot,Frederic Barbier,Guillaume Veux,Nicolas Gauthier,Nicolas Vaxelaire,Nicolas Bernier,Frederic Gianesello,Christine Raynaud

ACS APPLIED NANO MATERIALS（2024）

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Measurement of Electrostatic Fields in Ge-doped AlGaN Structures by Off-Axis Electron Holography

Palais Alexis,Cooper David,Monroy Eva,Hyot Bérangère

BIO Web of Conferences (2024): 24039

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Full InGaN Red Emission on Different InGaN Pseudo-Substrates for Native Full Color Micro-Displays

Amélie Dussaigne,Frederic Barbier,Patrick Le Maitre,Helge Haas,Jean-Christophe Pillet,Guillaume Veux,Colin Paillet,Adeline Grenier, Névine Grenier,Zineb Saghi,Audrey Jannaud,Adrien Michon,Stéphane Vézian,Benjamin Damilano,Bérangère Hyot

Gallium Nitride Materials and Devices XIX (2024)

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Effect of Al2o3 Thickness and Oxidant Precursors on the Interface Composition and Contamination in Al2o3/Gan Structures

Tarek Spelta,Eugenie Martinez,Marc Veillerot,Pedro Fernandes Paes Pinto Rocha,Laura Vauche,Bassem Salem,Berangere Hyot

Surface and Interface Analysisno. 7 (2024): 399-407

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Regular Red-Green-Blue InGaN Quantum Wells with in Content Up to 40% Grown on InGaN Nanopyramids

Amelie Dussaigne,Colin Paillet,Nevine Rochat,David Cooper,Adeline Grenier,Stephane Vezian,Benjamin Damilano,Adrien Michon,Berangere Hyot

COMMUNICATIONS MATERIALSno. 1 (2024)

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Synthesis of NIR/SWIR Absorbing InSb Nanocrystals Using Indium(I) Halide and Aminostibine Precursors

Yongju Kwon, Oleksandra Yeromina,Mariarosa Cavallo,Mathieu G. Silly,Debora Pierucci,Emmanuel Lhuillier,Dmitry Aldakov,Berangere Hyot,Peter Reiss

Advanced Functional Materials (2024)

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Towards Large Scale Integration of MoS2/graphene Heterostructure with ALD-grown MoS2

Berangere Hyot, Clotilde Ligaud,Tae Jin Yoo, Julien David-Vifflantzeff,Nicolas Gauthier,Stephane Cadot,Van Hoan Le, Paul Brunet,Lucie Le Van-Jodin

NANOTECHNOLOGYno. 16 (2024)

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Characterization of GaN Structures for Power Electronics by Secondary Ion Mass Spectrometry and Atomic Force Microscope Approach

Tarek Spelta,Marc Veillerot,Eugenie Martinez,Nicolas Chevalier,Denis Mariolle,Roselyne Templier,Bassem Salem,Pedro Fernandes Paes Pinto Rocha,Laura Vauche,Sarah Boubenia,Berangere Hyot

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Me...（2023）

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Impact of Etching Process on Al2O3/GaN Interface for MOSc-HEMT Devices Combining ToF-SIMS, HAXPES and AFM

Tarek Spelta,Marc Veillerot,Eugenie Martinez,Denis Mariolle,Roselyne Templier,Nicolas Chevalier,Pedro Fernandes Paes Pinto Rocha,Bassem Salem,Laura Vauche,Berangere Hyot

SOLID-STATE ELECTRONICS（2023）

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The search for manganese incorporation in MoSe 2 monolayer epitaxially grown on graphene

Maxime Gay,Minh-Tuan Dau,Céline Vergnaud,Alain Marty,Frédéric Bonell,Hervé Boukari,Colin Paillet,Bérangère Hyot,Hanako Okuno,Pierre Mallet,Jean-Yves Veuillen,Olivier Renault,Matthieu Jamet

Comptes Rendus. Physiqueno. S4 (2022): 5-21

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