andres bryant

Andres Bryant received the B.S.E.E. degree from The University of Maine, Orono, in 1982 and the Ph.D. degree from Stanford University, Stanford, CA, in 1986. His undergraduate research led to the development of ppb microacoustic-wave gas detectors. His graduate research led to the development of real-time scanning tunneling microscopes. Since 1986, he has been with the IBM Semiconductor Research and Development Center, Essex Junction, VT, where he first worked on advanced device development for DRAM and logic CMOS technologies. This work included the development and manufacturing installation of IBM's first high-performance SOI technology. More recently, his work has focused on the development of FinFET, Trigate, and ETSOI devices. He has authored over 30 publications and is the holder of over 40 patents.