WeChat Mini Program
Old Version Features
Research Interests

Papers共 513 篇Author StatisticsCo-AuthorSimilar Experts

By YearBy Citation主题筛选期刊级别筛选合作者筛选合作机构筛选
时间
引用量
主题
期刊级别
合作者
合作机构
Methodology for Determining Critical Screening Voltage in SiC MOSFETs Through Gate Leakage Current Hysteresis
Nikhil Bhardwaj, Shiva Houshmand,Hengyu Yu,Monikuntala Bhattacharya,Michael Jin,Limeng Shi,Jiashu Qian,Sandeep Anand,Atsushi Shimbori,Marvin H. White,Anant Agarwal
2024 IEEE 11th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)pp.1-4, (2024)
Cited0Views0EIWOSBibtex
0
0
Silicon Carbide Dmosfet Design Adaptation for LOW Interface Trap Density
Akul Kumar Singh,Suvendu Nayak,Hema Lata Rao Maddi,Susanna Yu,Swaroop Ganguly,Anant K. Agarwal
8TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM 2024pp.169-171, (2024)
Cited0Views0EIWOSBibtex
0
0
Evaluation of 1.2-Kv Rated SiC Trench MOSFETs under High-Voltage Switching Impulses
Hengyu Yu,Michael Jin, Nikhil Bhardwaj,Limeng Shi,Monikuntala Bhattacharya,Jiashu Qian, Shiva Houshmand,Tianshi Liu,Atsushi Shimbori,Marvin H. White,Anant K. Agarwal
2024 IEEE 11th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)pp.1-4, (2024)
Cited0Views0EIWOSBibtex
0
0
Load More
Author Statistics

#Papers: 513

#Citation: 14198

H-Index: 55

G-Index: 96

Sociability: 7

Diversity: 3

Activity: 6

  • 合作者
  • 学生
  • 导师
No result temporarily, you can search similar Scholar with the same research interest
Data Disclaimer
The page data are from open Internet sources, cooperative publishers and automatic analysis results through AI technology. We do not make any commitments and guarantees for the validity, accuracy, correctness, reliability, completeness and timeliness of the page data. If you have any questions, please contact us by email: report@aminer.cn