Aleksandr A. Podoskin

Aleksandr A. Podoskin was born in Miass, Russia, in 1986. He was graduated from Baltic State Technical University, Saint Petersburg, Russia, in 2009. In 2009, he joined the Semiconductor Luminescence and Injection Emitters Laboratory, Ioffe Institute, Russian Academy of Sciences, Saint Petersburg, Russia. His Ph.D. dissertation (2012) was devoted to development and investigation of GaAs, AlGaAs, and InGaAs light modulators based on asymmetric heterostructure for high power semiconductor lasers. His research interests include the development and investigation of different types of semiconductor lasers and laser-thyristors emitting in 650–1800 nm wavelength range.